| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| 5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CD214A-B40 CD214A-B40L CD214A-B220 CD214A-B30 CD21 |
Schottky Barrier Diodes 2A, VR=60V 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC
Schottky Barrier Rectifier Chip Diode
|
Bourns, Inc.
BOURNS[Bourns Electronic Solutions]
|
| HSB226WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
| SDM100K30L-7 SDM100K30L08 |
DIODE SCHOTTKY 30V 1.0A SOD323 1 A, 30 V, SILICON, SIGNAL DIODE
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
Diodes, Inc.
Diodes Incorporated
|
| JANS6761UR-1 1N5819UR 5819UR-1 6761UR-1 CDLL1A100 |
1A schottky barrier rectifier, 45V
1 AMP SCHOTTKY BARRIER RECTIFIERS 1 A, SILICON, SIGNAL DIODE, DO-213AB
Quad Wide-Bandwidth High-Output-Drive Op Amp 20-HTSSOP 0 to 70
Schottky Rectifier
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| BAT54SWT1G BAT54CWT1G |
Schottky Barrier diode
Schottky Diodes 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装，高可靠性的应用（共阳极）（双肖特基势垒二极管（高可靠性应用，TO258金属封装，共阳极连接））
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接))
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
|
SEMELAB LTD
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
